DocumentCode :
3015912
Title :
Entanglement generation using silicon wire waveguide
Author :
Takesue, Hiroki ; Fukuda, Hiroshi ; Tsuchizawa, Tai ; Watanabe, Toshio ; Yamada, Koji ; Tokura, Yasuhiro ; Itabashi, Sci-ichi
Author_Institution :
NTT Basic Res. Labs., NTT Corp., Atsugi
fYear :
2008
fDate :
17-19 Sept. 2008
Firstpage :
404
Lastpage :
406
Abstract :
We reported the first entanglement generation experiments using a silicon wire waveguide. In our experiments, we used a 1.09-cm long, 460-nm wide, and 220-nm thick waveguide that was fabricated from a silicon-on-insulator wafer. The waveguide loss was 3.1 dB, and the effective area calculated using a mode solver was 0.04 mum2 . We hope that our work will constitute a bridge between the silicon photonics and quantum information fields.
Keywords :
optical fabrication; optical losses; optical waveguides; quantum entanglement; quantum optics; silicon-on-insulator; Si-SiO2; distance 1.09 cm; entanglement generation; quantum information; silicon photonics; silicon wire waveguide; silicon-on-insulator; size 220 nm; size 460 nm; waveguide fabrication; waveguide loss; Character generation; Degradation; Interference; Laboratories; Optical fibers; Optical waveguides; Quantum entanglement; Quantum mechanics; Silicon; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
Type :
conf
DOI :
10.1109/GROUP4.2008.4638215
Filename :
4638215
Link To Document :
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