DocumentCode
3015950
Title
Fabrication and characterization of resonant cavity enhanced silicon photodetectors at 1.55 μm
Author
Casalino, M. ; Sirleto, L. ; Moretti, L. ; Gioffrè, M. ; Coppola, G. ; Iodice, M. ; Rendina, I.
Author_Institution
Consiglio Naz. delle Ric., IMM sez. Napoli, Naples
fYear
2008
fDate
17-19 Sept. 2008
Firstpage
410
Lastpage
412
Abstract
In this paper the realization and the characterization of a new kind of resonant cavity enhanced photodetector (RCE), fully compatible with silicon microelectronic technologies and working at 1.55 mum, are reported.
Keywords
cavity resonators; elemental semiconductors; integrated optoelectronics; optical fabrication; optical resonators; photodetectors; silicon; RCE fabrication; Si; resonant cavity enhanced silicon photodetectors characterization; silicon microelectronic technologies; wavelength 1.55 mum; Electrons; Fabrication; Infrared imaging; Iron; Mirrors; Optical scattering; Photodetectors; Resonance; Schottky barriers; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location
Cardiff
Print_ISBN
978-1-4244-1769-8
Electronic_ISBN
978-1-4244-1768-1
Type
conf
DOI
10.1109/GROUP4.2008.4638217
Filename
4638217
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