Title :
Characterization of thin oxide removal by rapid thermal annealing treatment
Author :
Hashim, Uda ; Shaari, Sahbudin ; Majlis, Burhanuddin Yeop
Author_Institution :
Dept. of Electr., Electron. & Syst. Eng., Kebangsaan Malaysia Univ., Bangi, Malaysia
Abstract :
A rapid thermal annealing treatment technique was introduced to remove a thin native oxide on silicon substrates. The native oxide was not present at the silicide/silicon interface after the wafer was thermally treated by RTA at 800°C for 60 seconds in an N2 ambient. This SEM cross-sectional micrograph observation was supported by X-ray diffraction analysis. XRD showed no traceable presence of an oxide peak. Therefore, RTA heat treatment is shown to be a suitable alternative method to remove the native oxide
Keywords :
X-ray diffraction; integrated circuit technology; rapid thermal annealing; scanning electron microscopy; silicon compounds; surface cleaning; 60 s; 800 C; N2; N2 ambient; RTA; RTA heat treatment; SEM cross-sectional micrograph; Si; SiO2-Si; X-ray diffraction analysis; XRD; native oxide; oxide peak; rapid thermal annealing treatment; rapid thermal annealing treatment technique; silicide/silicon interface; silicon substrate; thin native oxide removal; thin oxide removal; Atomic force microscopy; Chemicals; Cleaning; Hafnium; Rapid thermal annealing; Scanning electron microscopy; Silicides; Silicon; Thermal engineering; Titanium;
Conference_Titel :
Semiconductor Electronics, 1998. Proceedings. ICSE '98. 1998 IEEE International Conference on
Conference_Location :
Bangi
Print_ISBN :
0-7803-4971-7
DOI :
10.1109/SMELEC.1998.781182
