Characterization of thin oxide removal by rapid thermal annealing treatment

Author

Hashim, Uda ; Shaari, Sahbudin ; Majlis, Burhanuddin Yeop

Author_Institution

Dept. of Electr., Electron. & Syst. Eng., Kebangsaan Malaysia Univ., Bangi, Malaysia

fYear

1998

fDate

1998

Firstpage

213

Lastpage

216

Abstract

A rapid thermal annealing treatment technique was introduced to remove a thin native oxide on silicon substrates. The native oxide was not present at the silicide/silicon interface after the wafer was thermally treated by RTA at 800°C for 60 seconds in an N₂ ambient. This SEM cross-sectional micrograph observation was supported by X-ray diffraction analysis. XRD showed no traceable presence of an oxide peak. Therefore, RTA heat treatment is shown to be a suitable alternative method to remove the native oxide

Keywords

X-ray diffraction; integrated circuit technology; rapid thermal annealing; scanning electron microscopy; silicon compounds; surface cleaning; 60 s; 800 C; N₂; N₂ ambient; RTA; RTA heat treatment; SEM cross-sectional micrograph; Si; SiO₂-Si; X-ray diffraction analysis; XRD; native oxide; oxide peak; rapid thermal annealing treatment; rapid thermal annealing treatment technique; silicide/silicon interface; silicon substrate; thin native oxide removal; thin oxide removal; Atomic force microscopy; Chemicals; Cleaning; Hafnium; Rapid thermal annealing; Scanning electron microscopy; Silicides; Silicon; Thermal engineering; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 1998. Proceedings. ICSE '98. 1998 IEEE International Conference on

Conference_Location

Bangi

Print_ISBN

0-7803-4971-7

Type

conf

DOI

10.1109/SMELEC.1998.781182

Filename

781182