Title :
Analytical Theory of Graphene Nanoribbon Transistors
Author :
Zhao, Pei ; Choudhury, Mihir ; Mohanram, Kartik ; Guo, Jing
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL
Abstract :
Graphene has emerged as one of the most promising materials to address scaling challenges in the post silicon era. A simple model for graphene nanoribbon field-effect transistors (GNRFETs) is developed for treating the effects of edge bond relaxation, the third nearest neighbor interaction, and edge scattering, all of which are pronounced in GNRFETs, but not in carbon nanotube FETs.
Keywords :
carbon; field effect transistors; nanoelectronics; semiconductor device models; C; GNRFETs; edge bond relaxation; edge scattering; graphene nanoribbon field-effect transistors; third nearest neighbor interaction; Analytical models; Bonding; Circuit testing; FETs; Nearest neighbor searches; Orbital calculations; Photonic band gap; Scattering; Silicon; Thermal conductivity; Graphene nanoribbons; analytical model; edge bond relaxation; edge scattering; third nearest neighbor interaction;
Conference_Titel :
Design and Test of Nano Devices, Circuits and Systems, 2008 IEEE International Workshop on
Conference_Location :
Cambridge, MA
Print_ISBN :
978-0-7695-3379-7
DOI :
10.1109/NDCS.2008.22
