DocumentCode
3016165
Title
Damage-less graphene etching by oxygen neutral beam for graphene nanoribbon fabrication
Author
Wada, Atsushi ; Igarashi, Koji ; Okada, Takashi ; Samukawa, Seiji
Author_Institution
Inst. of Fluid Sci., Tohoku Univ., Sendai, Japan
fYear
2013
fDate
5-8 Aug. 2013
Firstpage
917
Lastpage
920
Abstract
Graphene etching using oxygen neutral beam for high-quality graphene nanoribbon fabrication was investigated. A convenient index of D-band to G-band Raman intensity ratio showed that fewer defects on the edge of the graphene after neutral beam etching were observed than after plasma etching. The results demonstrate that damage-less graphene etching is possible by neutral beam etching due to suppression of UV photon radiation.
Keywords
Raman spectra; dislocation etching; graphene; nanofabrication; nanoribbons; C; D-band Raman intensity ratio; G-band Raman intensity ratio; convenient index; damage-less graphene etching; defects; high-quality graphene nanoribbon fabrication; oxygen neutral beam etching; plasma etching; ultraviolet photon radiation suppression; Carbon; Etching; Fabrication; Graphene; Particle beams; Photonics; Plasmas; Graphene; defects; neutral beam etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2013 13th IEEE Conference on
Conference_Location
Beijing
ISSN
1944-9399
Print_ISBN
978-1-4799-0675-8
Type
conf
DOI
10.1109/NANO.2013.6720888
Filename
6720888
Link To Document