Title :
Electrically Pumped Vertical-External-Cavity Surface-Emitting Lasers With Patterned Tunnel Junction for Single Transversal-Mode Emission
Author :
Walczak, Jaroslaw ; Sarzala, Robert P. ; Wasiak, Michal ; Nakwaski, Wlodzimierz ; Sirbu, Alexei ; Czyszanowski, Tomasz ; Kapon, Eli
Author_Institution :
Photonics Group, Lοdz Univ. of Technol., Łόdz, Poland
Abstract :
This paper reports on a numerical analysis of methods for current injection into AlInGaAs/InP tunnel-junction electrically pumped vertical-external-cavity surface-emitting lasers. The tunnel junction is patterned to minimize the current crowding effect and support the fundamental transverse modes. Optimization of the tunnel junction radius predicts 9-mW emission and 4% wall-plug efficiency in the single-mode regime. Additional patterning of the tunnel junction in the form of a coaxial ring, without modifying its total radius but reducing its area, maintains or improves the emitted power and in addition enhances wall-plug efficiency by around 60%. A design of E-VECSEL is proposed which offers five times larger emitted power and wall-plug efficiency in the single-mode regime in comparison to recently reported experimental devices.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; laser modes; optical pumping; quantum well lasers; surface emitting lasers; AlInGaAs-InP; E-VECSEL design; current crowding effect; current injection; efficiency 4 percent; electrically pumped vertical-external-cavity surface-emitting lasers; emitted power; fundamental transverse modes; numerical analysis; patterned tunnel junction; power 9 mW; single transversal-mode emission; tunnel junction radius optimization; wall-plug efficiency; Distributed Bragg reflectors; Junctions; Optical pumping; Stimulated emission; Vertical cavity surface emitting lasers; Semiconductor lasers; Vertical External Cavity Surface Emitting Lasers; numerical simulations; tunnel junction; vertical external cavity surface emitting lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2015.2423614