Title :
Photochemical Active of SiO2, WO3 Doping on TiO2 Thin Film in H2S Removal
Author :
Ge Jie ; Zhang Cheng-zhong ; Liu Tao
Author_Institution :
Sch. of Environ. & Municipal Eng., Xi´an Univ. of Archit. & Technol., Xi´an, China
Abstract :
Recently, photocatalytic oxidation of pollutant in air with semiconductor photocatalyst is a hot spot in environmental science. The feasibility study of photochemical active of degrade H2S by SiO2, WO3 doping on TiO2 thin film has been taken. SiO2/TiO2 and WO3/TiO2 composite photocatalyst thin films have been made, and its purification capacity of H2S gas has been tested. X-ray diffraction and scanning electron microscopy have been employed to describe the character. Composite films of SiO2/TiO2 showed good removal efficiency of H2S more than TiO2 film about 8.59%. The WO3/TiO2 composite films have photocatalytic activity with H2S gas purification in the visible light. Theoretically H2S gas can be purification by WO3/TiO2 composite photocatalyst thin film under the visible light conditions.
Keywords :
X-ray diffraction; air pollution; catalysis; hydrogen compounds; photochemistry; scanning electron microscopy; silicon compounds; thin films; titanium compounds; tungsten compounds; H2S; SiO2; TiO2; WO3; X-ray diffraction; air; environmental science; photocatalyst thin films; photocatalytic oxidation; photochemical active; pollutant; scanning electron microscopy; semiconductor photocatalyst; Absorption; Doping; Films; Purification; Scanning electron microscopy; Surface treatment; X-ray diffraction; H2S; Photocatalysis; SiO2/TiO2; WO3/TiO2; component;
Conference_Titel :
Electrical and Control Engineering (ICECE), 2010 International Conference on
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-6880-5
DOI :
10.1109/iCECE.2010.970
