Title :
Efficient ZnO/CdS/InP heterojunction solar cell
Author :
Saito, Shotaro ; Hashimoto, Yoshio ; Ito, Kentara
Author_Institution :
Dept. of Electr. & Electron. Eng., Shinshu Univ., Nagano, Japan
Abstract :
Heterojunction solar cells consisting of an atom beam sputtered transparent conductive window layer/chemical bath deposited CdS buffer layer/p-type InP single crystal structure were studied. A total area cell efficiency up to 17.8% was obtained at AM 1.5 and was expected to reach as high as 23% based on this structure. The buffer layer 45 to 240 nm thick plays a key role to reduce sputter damages which would be formed at the surface of InP without this layer. It was found that the the choice of window materials has an important effect on the aging properties of the cell. When ZnO is used as a window material, the fill factor of the cell was particularly degraded by aging. Using an atom beam sputtered In2O3 window layer, the authors have been able to obtain more reliable solar cells
Keywords :
II-VI semiconductors; III-V semiconductors; cadmium compounds; indium compounds; p-n heterojunctions; semiconductor device testing; semiconductor growth; semiconductor thin films; solar cells; sputter deposition; sputtered coatings; zinc compounds; 17.8 percent; 23 percent; 45 to 240 nm; In2O3; ZnO-CdS-InP; ZnO/CdS/InP heterojunction solar cell; aging properties; atom beam sputtering; buffer layer; fill factor; sputter damage; window layer; Aging; Atomic beams; Atomic layer deposition; Buffer layers; Chemicals; Degradation; Heterojunctions; Indium phosphide; Photovoltaic cells; Zinc oxide;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520730
