DocumentCode :
3016900
Title :
Wafer-scale graphene synthesis, transfer and FETs
Author :
Teo, K.B.K. ; You, Bin ; Rupesinghe, N.L. ; Newham, A. ; Greenwood, P. ; Buttress, S. ; Cole, M.T. ; Tao, Li ; Lee, Jeyull ; Akinwande, Deji ; Celebi, K. ; Park, H.G. ; Sun, Jian
Author_Institution :
Nanoinstruments, Aixtron Ltd., Cambridge, UK
fYear :
2013
fDate :
5-8 Aug. 2013
Firstpage :
1200
Lastpage :
1203
Abstract :
Growth and characterization of graphene grown using copper foils as well as copper films on silicon dioxide on silicon substrates were performed. Kinetics of growth and effective activation energy for the graphene synthesis will be discussed for the surface catalytic synthesis of graphene. Conditions for large-scale synthesis of monolayer graphene will be addressed in this talk. Wafer-scale graphene transfer and electrical results will be presented. Based on our preliminary results from capped 100mm wafer scale graphene transistors, we expect a mobility of 4-6 k cm2/Vs with symmetry hole/electron transport. Key considerations and challenges for scaling are discussed and results for graphene growth on the 300mm wafer scale will be discussed.
Keywords :
carrier mobility; catalysis; chemical vapour deposition; field effect transistors; graphene; semiconductor growth; semiconductor thin films; surface chemistry; C-Cu-SiO2-Si; FET; activation energy; copper films; copper foils; large scale synthesis; monolayer graphene; size 100 mm; size 300 mm; surface catalytic synthesis; symmetry hole electron transport; wafer scale graphene synthesis; Copper; Films; Graphene; Kinetic theory; Silicon; Substrates; Sun;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO), 2013 13th IEEE Conference on
Conference_Location :
Beijing
ISSN :
1944-9399
Print_ISBN :
978-1-4799-0675-8
Type :
conf
DOI :
10.1109/NANO.2013.6720922
Filename :
6720922
Link To Document :
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