• DocumentCode
    3017170
  • Title

    Dispersion Inversion in High Index Contrast AlGaAs-Nanowires

  • Author

    Meier, J. ; Mojahedi, M. ; Aitchison, J.S.

  • Author_Institution
    Univ. of Toronto, Toronto
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We present numerical simulations of the temporal dispersion in high contrast AlGaAs nanowires and predict the inversion of the group velocity dispersion for sub-micron sized wires.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; nanowires; optical dispersion; optical materials; optical waveguides; semiconductor quantum wires; AlGaAs; group velocity dispersion inversion; high index contrast nanowires; high index contrast waveguides; numerical simulations; submicron sized wires; Buffer layers; Etching; Gallium arsenide; Integrated optics; Nanowires; Numerical simulation; Optical waveguides; Photonic band gap; Silicon on insulator technology; Tellurium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4453276
  • Filename
    4453276
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3017170