• DocumentCode
    3017203
  • Title

    Fabrication of microstructures using aluminum anodization techniques

  • Author

    Nadeem, Ahmed ; Mescher, Mark ; Rebello, Keith ; Weiss, Lee E. ; Wu, Clarence ; Feldman, Marc ; Reed, Michael L.

  • Author_Institution
    Med. Center, Pittsburgh Univ., PA, USA
  • fYear
    1998
  • fDate
    25-29 Jan 1998
  • Firstpage
    274
  • Lastpage
    277
  • Abstract
    A promising technique for the fabrication of high-aspect-ratio microstructures, presented by Tan et. al. at MEMS-95, takes advantage of the highly ordered pore structure of anodic metal oxides. In this work, we have extended and simplified this method. This process is capable of producing high-aspect-ratio microstructures oriented normal to a nonplanar substrate. Unlike the original process in which the aluminum substrate was anodized to the desired depth, masked and subsequently etched, the modified process involves performing the masking lithography prior to anodization. Patterned areas of an aluminum substrate are masked with a 0.6μm layer of sputtered silicon dioxide. The SiO2 layer prevents anodization in masked areas while the oxide grows in unmasked areas. In this paper, we present preliminary results using this local anodization process on aluminum substrates and discuss the use of the process for fabricating structures on nonplanar substrates
  • Keywords
    aluminium; anodisation; lithography; masks; micromechanical devices; silicon compounds; substrates; 0.6 mum; Al; Al-SiO2; SiO2 layer; aluminum anodization techniques; aluminum substrate; anodization; high-aspect-ratio microstructures; lithography; local anodization process; mask; microstructures; nonplanar substrate; Adhesives; Aluminum; Cardiology; Chromium; Fabrication; Lithography; Microstructure; Shape; Sputter etching; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 1998. MEMS 98. Proceedings., The Eleventh Annual International Workshop on
  • Conference_Location
    Heidelberg
  • ISSN
    1084-6999
  • Print_ISBN
    0-7803-4412-X
  • Type

    conf

  • DOI
    10.1109/MEMSYS.1998.659767
  • Filename
    659767