Title :
Multi-sensor diode for magnetic field and photo detection
Author :
Sutthinet, Chalin ; Phetchakul, Toempong ; Luanatikomkul, Wittaya ; Poyai, Amporn
Author_Institution :
Dept. of Electron., King Mongkut´s Inst. of Technol. Ladkrabang, Bangkok, Thailand
Abstract :
This research presents the multi-sensor that can detect both magnetic field and photo in the one device. The structure is based on p-n junction diode that is the fundamental of light detecting. The idea is how to design p-n junction for magnetic field. The dual magneto diode structure is a solution. It is designed to be suitable for these purposes. The device is specially designed and simulation by Sentaurus TCAD. It is fabricated by standard CMOS process and measured the responses of magnetic field and light. It shows a good device that detects two types of energy equally well. The relative sensitivity of magnetic response is 57 mT-1 at forward bias 1 mA and 128 mT-1 at reverse 8 nA. The dark current of device is 7.34 mA at standard test condition (25°C, AM 1.5, 100 W/m2). It is current mode device generating photo current and cathode current difference that is linearly induced from magnetic field.
Keywords :
CMOS integrated circuits; integrated circuit design; magnetic field measurement; magnetic sensors; p-n junctions; photocathodes; photoconductivity; photodetectors; photodiodes; photoemission; sensor fusion; technology CAD (electronics); Sentaurus TCAD simulation; cathode current difference; current 1 mA; current 7.34 mA; current 8 nA; current mode device; dual magnetodiode structure; light detection; magnetic field measurement; magnetic field sensor; multisensor diode; p-n junction diode; photocurrent; photodetection; standard CMOS process; temperature 25 degC; Absorption; Anodes; Cathodes; Magnetic separation; Magnetic tunneling; Saturation magnetization;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2015 IEEE 10th International Conference on
Conference_Location :
Xi´an
DOI :
10.1109/NEMS.2015.7147405
