Balun LNA with continuously controllable gain and with noise and distortion cancellation

Author

Bastos, I. ; Oliveira, L.B. ; Oliveira, J.P. ; Goes, J. ; Silva, M.M.

Author_Institution

Dept. of Eng.a Electrotec., Univ. Nova de Lisboa, Caparica, Portugal

fYear

2012

fDate

20-23 May 2012

Firstpage

2143

Lastpage

2146

Abstract

In this paper we present a balun LNA with gain adjustable continuously by a voltage. The LNA is based on the combination of a common-gate and a common-source stage to cancel the noise and distortion of the common-gate stage. To obtain higher gain with the same DC voltage drop we replace resistors by PMOS transistors. This also allows continuous gain control and we show that by proper design, the effect on IIP3 and IIP2 can be neglected. With this approach, we avoid the use of switches, and the input impedance and the noise figure are not affected. Simulation results with a 130 nm CMOS technology show that the balun LNA has gain continuously tunable between 12 and 20 dB. The NF is below than 3.2 dB and the best IIP3 is higher than 0 dBm and the maximum IIP2 is 14 dBm. The total power dissipation is only 4.8 mW for a bandwidth of 5 GHz.

Keywords

CMOS analogue integrated circuits; MOSFET; baluns; electric potential; low noise amplifiers; microwave amplifiers; microwave integrated circuits; CMOS technology; DC voltage drop; IIP2; IIP3; PMOS transistor; balun LNA; bandwidth 5 GHz; common-gate stage; common-source stage; continuously controllable gain; distortion cancellation; gain 12 dB; gain 20 dB; input impedance; noise cancellation; noise figure; power 4.8 mW; power dissipation; resistor; size 130 nm; switch; CMOS integrated circuits; Gain; Impedance matching; Noise; Noise measurement; Transistors; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2012 IEEE International Symposium on

Conference_Location

Seoul

ISSN

0271-4302

Print_ISBN

978-1-4673-0218-0

Type

conf

DOI

10.1109/ISCAS.2012.6271711

Filename

6271711