Development of a 6GHz resonator by using an AlN diamond structure

Author

Fujii, Satoshi ; Kawano, Shuichi ; Umeda, Takatoshi ; Fujioka, Masashi ; Yoda, Mituhiro

Author_Institution

Adv. Technol. Dev. Center, Seiko Epson Corp., Nagano

fYear

2008

fDate

2-5 Nov. 2008

Firstpage

1916

Lastpage

1919

Abstract

We have developed a diamond SAW resonator capable of over 3 GHz using a SiO₂/IDT/AlN/diamond structure. The structure enables a thicker Al-IDT and a lower series resistance for the SAW resonator based on FEM calculation results. These attributes lead to low insertion loss for SAW devices over 3 GHz compared to SiO₂/IDT/ZnO/diamond structures. A 2port 6.4 GHz resonator was fabricated and has successfully achieved a low insertion loss at 6.6 dB, a Q value of 450, and a low TCF. It was also found that the low propagation loss of SAW, 0.03 dB/wavelength, was achieved at 6 GHz using the AlN thin film as a piezoelectric material instead of the ZnO thin film.

Keywords

III-V semiconductors; aluminium compounds; diamond; elemental semiconductors; finite element analysis; interdigital transducers; piezoelectric materials; semiconductor thin films; silicon compounds; surface acoustic wave resonators; surface acoustic wave transducers; thin film devices; wide band gap semiconductors; FEM calculation; SiO₂-AlN-C; TCF; diamond SAW resonator; frequency 6 GHz; frequency 6.4 GHz; interdigital transducer; loss 0.03 dB; loss 6.6 dB; low-insertion loss resonator; low-propagation loss resonator; piezoelectric material; surface acoustic wave; Acoustic materials; Electrodes; Frequency; Insertion loss; Piezoelectric films; Reflection; Surface acoustic wave devices; Surface acoustic waves; Temperature; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2008. IUS 2008. IEEE

Conference_Location

Beijing

Print_ISBN

978-1-4244-2428-3

Electronic_ISBN

978-1-4244-2480-1

Type

conf

DOI

10.1109/ULTSYM.2008.0472

Filename

4803243