Title :
Accurate calculation of quantum kinetic energy of single-electron transistor at room temperature
Author :
Xiaobao Chen ; Zuocheng Xing ; Bingcai Sui
Author_Institution :
Sch. of Comput., Nat. Univ. of Defense Technol., Changsha, China
Abstract :
This paper proposes a novel analytical model for semiconductor single-electron transistor (SET) with concrete size coulomb island at room temperature. The number of electrons in island of SET is analyzed when it is odd number or even number, respectively, then a uniform calculation model is gained for the first time. Based on the model, the I-V characteristics such as coulomb oscillation and coulomb blockade of SET with concrete size coulomb island are simulated and analyzed. The analysis of the experiment results indicates that this model accords with reality and will be very useful for estimating the realistic performance of the SET circuits at room temperature.
Keywords :
Coulomb blockade; single electron transistors; concrete size coulomb island; coulomb blockade; coulomb oscillation; quantum kinetic energy; room temperature; semiconductor single electron transistor; uniform calculation model; Analytical models; Capacitance; Oscillators; Quantization (signal); Single electron transistors; Temperature; Tunneling;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2013 13th IEEE Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-0675-8
DOI :
10.1109/NANO.2013.6720960
