Power-efficient low-noise 86 GHz broadband amplifier in 130 nm SiGe BiCMOS

Author

Ran Ding ; Zhe Xuan ; Peng Yao ; Baehr-Jones, Tom ; Prather, Dennis ; Hochberg, Michael

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Delaware, Newark, DE, USA

Volume

50

Issue

10

fYear

2014

fDate

May 8 2014

Firstpage

741

Lastpage

743

Abstract

A power-efficient, low-noise, broadband amplifier is demonstrated in a 130 nm SiGe BiCMOS process. The circuit exhibits a 20 dB gain, 86 GHz bandwidth and consumes only 89 mW DC power, achieving a gain-bandwidth against DC power efficiency of 9.66 GHz/mW - a significant improvement over the prior art. Ultra-high data rates (>80 Gbit/s) are supported owing to a low group delay variation of ±5.9 ps up to 100 GHz. Intended as a low-noise transimpedance front-end for optical receivers, the circuit exhibits a low average input-referred-noise of 20.4 pA/√(Hz), which is comparable to or better than the state-of-the-art at much lower data rates.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; field effect MIMIC; low noise amplifiers; millimetre wave amplifiers; semiconductor materials; wideband amplifiers; BiCMOS process; DC power; SiGe; bandwidth 86 GHz; gain 20 dB; low-noise transimpedance front-end; optical receivers; power 89 mW; power-efficient low-noise broadband amplifier; size 130 nm;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2014.0367

Filename

6824047