Low-power high-voltage charge pumps for implantable microstimulators

Two low-power high-voltage charge pumps have been designed to generate required voltage needed for intracortical microstimulation. High-voltage technology (0.8μm CMOS) has been used to generate high-supply voltage level with low-power consumption and low-voltage technology (0.13μm CMOS) has been used to investigate the possibility of generating high-supply voltage level overcoming the technology limitations. Both designs generate supply voltages more than 20V (>; ±10V) and consume low static power. The design in 0.8μm technology generates 24.52V supply voltage for no load and consumes 3.73mW static power. On the other hand, the design in 0.13μm CMOS technology generates 18.96 V for no load and consumes 0.8976mW static power.