InP-based quantum well solar cells grown by chemical beam epitaxy

Author

Freundlich, A. ; Rossignol, V. ; Vilela, M.F. ; Renaud, P. ; Bensacula, A. ; Medelci, N.

Author_Institution

Space Vacuum Epitaxy Center, Houston Univ., TX, USA

Volume

2

fYear

1994

fDate

5-9 Dec 1994

Firstpage

1886

Abstract

We present the first experimental investigation of InP based-multiquantum well (MQW) solar cells. Lattice matched In_0.47Ga_0.53As/InP and strained InAs_xP_1-x/InP (x=0.3 to 0.7) multiquantum wells were introduced in the intrinsic region of a p-i(MQW)-n InP solar cell. All device structures (MQW and InP p and n layer) were grown by chemical beam epitaxy

Keywords

III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; solar cells; In_0.47Ga_0.53As-InP; InAsP-InP; chemical beam epitaxial growth; lattice matched In_0.47Ga_0.53As/InP; p-i(MQW)-n InP solar cell; strained InAs_xP_1-x/InP; Chemicals; Epitaxial growth; Indium phosphide; Lattices; Molecular beam epitaxial growth; Photonic band gap; Photovoltaic cells; Quantum well devices; Space technology; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520735

Filename

520735