• DocumentCode
    3018065
  • Title

    Intersubband Transition of AlN/GaN Quantum Wells in Optimized AlN-based Waveguide Structure

  • Author

    Shimizu, T. ; Kumtornkittikul, C. ; Iizuka, N. ; Sugiyama, M. ; Nakano, Y.

  • Author_Institution
    Univ. of Tokyo, Tokyo
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We achieved low-power saturation of intersubband absorption at 1.5 mum with AIN-based AIN/GaN quantum wells. By optimizing the etching condition of waveguides, the saturation energy was reduced by a factor of 3.
  • Keywords
    III-V semiconductors; aluminium compounds; etching; gallium compounds; optical saturation; optical waveguides; semiconductor quantum wells; wide band gap semiconductors; AlN-GaN; etching; intersubband absorption; low-power saturation; quantum wells; saturation energy; waveguide structure; wavelength 1.5 mum; Absorption; Communication switching; Epitaxial layers; Etching; Gallium nitride; Optical waveguides; Propagation losses; Quantum well devices; Switches; Waveguide transitions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4453317
  • Filename
    4453317
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3018065