MOCVD growth of GaAsP on Si for tandem solar cell application

Author

Hayashi, Kiyotaka ; Soga, Tetsuo ; Nishikawa, Hironobu ; Jimbo, Takashi ; Umeno, Masayoshi

Author_Institution

Dept. of Electr. & Comput. Eng., Nagoya Inst. of Technol., Japan

Volume

2

fYear

1994

fDate

5-9 Dec 1994

Firstpage

1890

Abstract

In this paper, the crystal growth of GaAsP on Si substrate for solar cell application and the characteristics of GaAsP/Si monolithic tandem solar cells are described. The conversion efficiency is improved by using thermal cycle annealing (TCA) and a graded buffer layer. TEM micrographs show that the dislocation density is drastically decreased with using TCA. The conversion efficiency of GaAsP solar cell on Si with GaAs buffer layer is higher than that with GaP buffer layer. The improvement in the efficiency is obtained by reducing the dislocation density in the GaAsP layer

Keywords

CVD coatings; III-V semiconductors; annealing; chemical vapour deposition; crystal growth from vapour; dislocation density; elemental semiconductors; gallium arsenide; gallium compounds; semiconductor device testing; semiconductor growth; silicon; solar cells; transmission electron microscopy; GaAsP-Si; GaAsP/Si monolithic tandem solar cells; MOCVD semiconductor growth; TEM micrographs; conversion efficiency; dislocation density; graded buffer layer; thermal cycle annealing; Application software; Buffer layers; Etching; Gallium arsenide; Gold; MOCVD; Photovoltaic cells; Physics; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520736

Filename

520736