DocumentCode
3018208
Title
Ultrafast Intervalley Transitions in GaN Single Crystals
Author
Wu, Shuai ; Geiser, P. ; Jun, J. ; Karpinski, J. ; Sobolewski, Roman
Author_Institution
Univ. of Rochester, Rochester
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
We have studied time-resolved intervalley transitions of electrons between the conduction band Gamma and L valleys in bulk GaN crystals using a two-color, femtosecond, pump-probe technique. The transition threshold and intervalley scattering times were determined.
Keywords
III-V semiconductors; conduction bands; gallium compounds; high-speed optical techniques; infrared spectra; time resolved spectra; ultraviolet spectra; wide band gap semiconductors; GaN; conduction band; femtosecond pump-probe technique; intervalley scattering times; near-infrared spectroscopy; single crystals; time-resolved intervalley transitions; transition threshold; two-color pump-probe technique; ultrafast intervalley transitions; ultraviolet spectroscopy; Crystals; Electrons; Gallium nitride; Laser excitation; Laser transitions; Optical scattering; Particle scattering; Probes; Spectroscopy; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4453323
Filename
4453323
Link To Document