DocumentCode :
3018277
Title :
Temperature treatment on Silicon Nanowires for reliability studies
Author :
Willems, Nathan ; Wejinya, Uche ; Zhuxin Dong
Author_Institution :
Dept. of Micro Electron. & Photonics, Univ. of Arkansas, Fayetteville, AR, USA
fYear :
2013
fDate :
5-8 Aug. 2013
Firstpage :
321
Lastpage :
324
Abstract :
Material reliability is among the crucial factors that impact material performances before device applications. In order to predict material reliability, accelerated aging study-a study to predict material shelf life when subjected to temperature, was performed on Silicon Nanowires. We investigated the effects of process conditions on the diameters and the quality of Si NWs using Atomic Force Microscopy. The experimental results revealed diameter of Si NWs has linear relationship with varying temperature. These results are of significant importance and will be a critical design consideration for the manufacture of Nanoelectromechanical systems involving Si NWs.
Keywords :
ageing; annealing; atomic force microscopy; nanoelectromechanical devices; nanowires; reliability; semiconductor quantum wires; silicon; Si; Si nanowire diameter; accelerated aging study; atomic force microscopy; crucial factors; design consideration; device application; material performance; material reliability; material shelf life; nanoelectromechanical systems; process condition effects; reliability studies; temperature treatment; Accelerated aging; Nanowires; Reliability; Silicon; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO), 2013 13th IEEE Conference on
Conference_Location :
Beijing
ISSN :
1944-9399
Print_ISBN :
978-1-4799-0675-8
Type :
conf
DOI :
10.1109/NANO.2013.6720984
Filename :
6720984
Link To Document :
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