DocumentCode :
3018331
Title :
Study on fabrication and characterization of single CuO nanowire devices
Author :
Chaolei Huang ; Xiaojun Tian ; Jie Liu ; Longhai Li ; Zengxu Zhao ; Wenxue Wang ; Zaili Dong ; Lianqing Liu
Author_Institution :
State Key Lab. of Robot., Shenyang Inst. of Autom., Shenyang, China
fYear :
2013
fDate :
5-8 Aug. 2013
Firstpage :
337
Lastpage :
341
Abstract :
CuO nanowire is an important one-dimensional semiconductor nano-material which can be used in field effect transistors, photovoltaic cells, field emission nanodevices, and chemical and gas sensors. In this paper, CuO nanowires are synthesized by heating copper substrates in air, and the CuO nanowire is assembled on two opposite microelectrodes to fabricate a single CuO nanowire nanodevice by dielectrophoresis (DEP). In experiment, suitable parameters are chosen, such as concentration of the CuO nanowire solution, applied voltage and frequency on the microelectrodes, time of DEP duration, to assemble a single CuO nanowire on the microelectrode. Using this single nanowire nanodevice, this paper measured FET effect and photoconductivity of the single CuO nanowire. The results show that the single CuO nanowire nanodevice can work as a FET and it also has novel sensitivity to light intensity.
Keywords :
copper; copper compounds; electrophoresis; field effect transistors; field emission; nanowires; photovoltaic cells; semiconductor materials; Cu; CuO; DEP duration; chemical sensors; copper substrates; dielectrophoresis; field effect transistors; field emission nanodevices; gas sensors; microelectrodes; photoconductivity; photovoltaic cells; semiconductor nanomaterial; single CuO nanowire devices; single nanowire nanodevice; Copper; Field effect transistors; Gas detectors; Microelectrodes; Nanobioscience; Nanoscale devices; CuO nanowire; DEP; FET; dielectrophoresis; field effect transistor; photoconductivity; photodector;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO), 2013 13th IEEE Conference on
Conference_Location :
Beijing
ISSN :
1944-9399
Print_ISBN :
978-1-4799-0675-8
Type :
conf
DOI :
10.1109/NANO.2013.6720986
Filename :
6720986
Link To Document :
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