Title :
Epitaxial lift-off in photovoltaics:ultra thin Al0.2Ga 0.8As cell in a mechanically stacked (Al,Ga)As/Si tandem
Author :
Zahraman, K. ; Guillaume, J.C. ; Nataf, G. ; Beaumont, B. ; Leroux, M. ; Gibart, P. ; Faurie, J.P.
Author_Institution :
CNRS, Valbonne, France
Abstract :
The potential of high conversion efficiency of solar energy through the combination of Al0.2Ga0.8As and Si cells is illustrated by a mechanically stacked tandem using for the first time the epitaxial lift-off (ELO) technique to remove the top cell from its substrate. The selective etching of the GaAs substrate provides efficient light transmission to the bottom cell. Photoluminescence decay experiments show also that substrate removal enhances photon recycling effects. The measured efficiency of the Al0.2Ga0.8As/Si tandem reaches 21% AM1.5
Keywords :
III-V semiconductors; aluminium compounds; elemental semiconductors; epitaxial growth; gallium arsenide; photoluminescence; semiconductor device testing; semiconductor growth; silicon; solar cells; substrates; 21 percent; Al0.2Ga0.8As-Si; Al0.2Ga0.8As/Si tandem solar cells; bottom cell; epitaxial lift-off technique; light transmission; mechanically stacked tandem; photoluminescence decay; photon recycling effects; selective etching; semiconductor; solar energy; substrate; Etching; Gallium arsenide; Photoconductivity; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Recycling; Solar power generation; Substrates; Transistors;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520738
