Title :
Novel tri-state inverter based on junction band-to-band tunneling-enhanced silicon nanoscale CMOS technology
Author :
Yosep Kim ; Sunhae Shin ; Kyung Rok Kim
Author_Institution :
Electr. & Comput. Eng., Ulsan Nat. Inst. of Sci. & Technol., Ulsan, South Korea
Abstract :
We propose a novel tri-state inverter based on junction band-to-band tunneling (BTBT)-enhanced nanoscale CMOS structure. By suppressing the gate-induced drain leakage (GIDL) current, an additional stable state, “1/2”, can be generated with intermediate level from voltage dividing in series resistance of off-state n/pMOS. The high-speed performance of our proposed tri-state inverter has been estimated with the junction BTBT-enhanced 45 nm Si CMOS technology.
Keywords :
CMOS integrated circuits; elemental semiconductors; invertors; leakage currents; silicon; tunnelling; BTBT-enhanced nanoscale CMOS structure; GIDL current; Si; Si CMOS technology; gate-induced drain leakage current; junction band-to-band tunneling; off-state n-pMOS; series resistance; silicon nanoscale CMOS technology; size 45 nm; tri-state inverter; CMOS integrated circuits; Doping; Inverters; Logic gates; MOS devices; Silicon; Substrates;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2013 13th IEEE Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-0675-8
DOI :
10.1109/NANO.2013.6720999
