DocumentCode :
3018645
Title :
Semiconductor Superlattices and Heterojunction Devices in China
Author :
Dong, Z.
Author_Institution :
Institute of Semiconductors, Chinese Academy of Sciences, China
Volume :
1
fYear :
1992
fDate :
11-13 Aug. 1992
Firstpage :
547
Lastpage :
550
Keywords :
Gallium arsenide; Germanium silicon alloys; HEMTs; Heterojunction bipolar transistors; III-V semiconductor materials; Lattices; Microstructure; Semiconductor superlattices; Sheet materials; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1992. APMC 92. 1992 Asia-Pacific
Conference_Location :
Adelaide, South Australia
Print_ISBN :
0-7803-0549-3
Type :
conf
DOI :
10.1109/APMC.1992.672100
Filename :
672100
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3018645
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