DocumentCode
3018645
Title
Semiconductor Superlattices and Heterojunction Devices in China
Author
Dong, Z.
Author_Institution
Institute of Semiconductors, Chinese Academy of Sciences, China
Volume
1
fYear
1992
fDate
11-13 Aug. 1992
Firstpage
547
Lastpage
550
Keywords
Gallium arsenide; Germanium silicon alloys; HEMTs; Heterojunction bipolar transistors; III-V semiconductor materials; Lattices; Microstructure; Semiconductor superlattices; Sheet materials; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1992. APMC 92. 1992 Asia-Pacific
Conference_Location
Adelaide, South Australia
Print_ISBN
0-7803-0549-3
Type
conf
DOI
10.1109/APMC.1992.672100
Filename
672100
Link To Document