Dynamic electro-thermal physically based compact models of the power devices for device and circuit simulations

Author

Igic, P.M. ; Mawby, P.A. ; Towers, M.S. ; Batcup, S.

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Wales, Swansea, UK

fYear

2001

fDate

2001

Firstpage

35

Lastpage

42

Abstract

New dynamic electro-thermal models of the power MOSFET, and power bipolar devices (PiN diode and IGBT) are presented in this paper. Firstly, electric device models were made, and then they were transformed into the electro-thermal models by adding a thermal node. This thermal node stores information about junction temperature and represents a connection between the device and rest of the circuit thermal network. All models have been found to be efficient and robust in all cases examined

Keywords

circuit simulation; insulated gate bipolar transistors; p-i-n diodes; power MOSFET; power bipolar transistors; power semiconductor diodes; semiconductor device models; thermal analysis; IGBT; PiN diode; circuit simulations; circuit thermal network; device simulations; dynamic electro-thermal models; dynamic electro-thermal physically based compact models; electric device models; electro-thermal models; junction temperature; power MOSFET; power bipolar devices; power devices; thermal node; Buffer layers; Capacitance; Circuit simulation; Doping; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Temperature; Thermal resistance; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Thermal Measurement and Management, 2001. Seventeenth Annual IEEE Symposium

Conference_Location

San Jose, CA

Print_ISBN

0-7803-6649-2

Type

conf

DOI

10.1109/STHERM.2001.915142

Filename

915142