DocumentCode
3018870
Title
Incorporating 2D quantum effects into full band Monte Carlo simulations of QWFETs
Author
Marino, Fabio Alessio ; Tierney, Brian ; Akis, R. ; Saraniti, M. ; Goodnick, S.M.
Author_Institution
Sch. of Electr., Arizona State Univ., Tempe, AZ, USA
fYear
2013
fDate
5-8 Aug. 2013
Firstpage
67
Lastpage
70
Abstract
A method for incorporating 2D quantum mechanical effects into a full-band Cellular Monte Carlo simulator is described and applied to the simulation of Quantum Well Field Effect Transistors (QWFETs). Incorporating all relevant scattering mechanisms, good agreement is obtained between simulation and experiment in the case of a device with an InGaAs channel. The effect of scaling the QW width is also investigated.
Keywords
III-V semiconductors; Monte Carlo methods; field effect transistors; gallium arsenide; indium compounds; quantum well devices; 2D quantum mechanical effects; InGaAs; InGaAs channel; QWFET; full-band cellular Monte Carlo simulator; quantum well field effect transistors; scattering mechanism; Electric potential; Indium gallium arsenide; Monte Carlo methods; Quantum mechanics; Scattering; Solid modeling; Three-dimensional displays; III–V devices; Monte Carlo methods; QWFETs;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2013 13th IEEE Conference on
Conference_Location
Beijing
ISSN
1944-9399
Print_ISBN
978-1-4799-0675-8
Type
conf
DOI
10.1109/NANO.2013.6721009
Filename
6721009
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