DocumentCode
3018987
Title
Optical Linewidth and Dephasing in Single InAs Quantum Dots and Coupled Dot-Microcavity Systems
Author
Rudin, S. ; Reinecke, T.L.
Author_Institution
U. S. Army Res. Lab., Adelphi
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
We study effects of carrier-phonon interactions on the optical spectra of single semiconductor quantum dots in etched mesas and dots imbedded in semiconductor cavities. The temperature dependence of the exciton linewidths in single dots is compared with experimental results.
Keywords
III-V semiconductors; indium compounds; microcavities; phonon-exciton interactions; photoluminescence; semiconductor quantum dots; spectral line breadth; InAs; carrier-phonon interaction; coupled dot-micro cavity system; etched mesas; exciton linewidth; optical dephasing; optical linewidth; optical spectra; semiconductor cavity; semiconductor quantum dot; single InAs quantum dot; Absorption; Excitons; Nonlinear optics; Optical coupling; Optical mixing; Optical scattering; Phonons; Quantum computing; Quantum dots; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4453363
Filename
4453363
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