DocumentCode :
3018987
Title :
Optical Linewidth and Dephasing in Single InAs Quantum Dots and Coupled Dot-Microcavity Systems
Author :
Rudin, S. ; Reinecke, T.L.
Author_Institution :
U. S. Army Res. Lab., Adelphi
fYear :
2007
fDate :
6-11 May 2007
Firstpage :
1
Lastpage :
2
Abstract :
We study effects of carrier-phonon interactions on the optical spectra of single semiconductor quantum dots in etched mesas and dots imbedded in semiconductor cavities. The temperature dependence of the exciton linewidths in single dots is compared with experimental results.
Keywords :
III-V semiconductors; indium compounds; microcavities; phonon-exciton interactions; photoluminescence; semiconductor quantum dots; spectral line breadth; InAs; carrier-phonon interaction; coupled dot-micro cavity system; etched mesas; exciton linewidth; optical dephasing; optical linewidth; optical spectra; semiconductor cavity; semiconductor quantum dot; single InAs quantum dot; Absorption; Excitons; Nonlinear optics; Optical coupling; Optical mixing; Optical scattering; Phonons; Quantum computing; Quantum dots; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
Type :
conf
DOI :
10.1109/CLEO.2007.4453363
Filename :
4453363
Link To Document :
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