Title :
Single-Mode, High-Speed, and High-Power Vertical-Cavity Surface-Emitting Lasers at 850 nm for Short to Medium Reach (2 km) Optical Interconnects
Author :
Jin-Wei Shi ; Zhi-Rui Wei ; Kai-Lun Chi ; Jia-Wei Jiang ; Jhih-Min Wun ; I-Cheng Lu ; Chen, Jiann-Jong ; Ying-Jay Yang
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Zhongli, Taiwan
Abstract :
The vertical-cavity surface-emitting lasers (VCSELs) with high single-mode (narrow linewidth) output power are essential to minimize chromatic dispersion and to further improve the bit-rate distance product in a multimode fiber, which has a significant propagation loss (~3.5 dB/km) at 850 nm wavelength. Here, we demonstrate the detailed design considerations and fabrication of a single-mode, high-power, and high-speed VCSELs at the 850 nm wavelength with oxide-relief and Zn-diffusion apertures for the application of short (0.3 km) to medium reach (2 km) optical interconnects. By optimizing the relative geometric sizes between two such apertures in our demonstrated 850-nm VCSELs, we can not only attain high single-mode output power (~6.5 mW), but also with a reasonable threshold current (<; 2.0 mA). Furthermore, the spatial hole burning effect induced low-frequency roll off can also be minimized in our optimized structure to obtain a maximum data rate up to 26 Gbit/s. The record-high bit rate-distance products for OM4 MMF transmission under ON-OFF keying (14 Gbit/s × 2.0 km) modulation formats have been successfully demonstrated by the use of our VCSEL.
Keywords :
laser modes; optical interconnections; semiconductor lasers; surface emitting lasers; ON-OFF keying; high-power vertical-cavity surface-emitting lasers; high-speed lasers; short to medium reach optical interconnects; single-mode lasers; wavelength 850 nm; Apertures; Current measurement; Frequency measurement; High-speed optical techniques; Optical variables measurement; Performance evaluation; Vertical cavity surface emitting lasers; Semiconductor lasers; vertical-cavity surface-emitting lasers (VCSELs);
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2013.2281235