• DocumentCode
    3019099
  • Title

    Dynamics of exciton recombination in InAs Quantum Dots embedded in InGaAs/GaAs Quantum Well

  • Author

    Mu, Xiaodong ; Ding, Yujie J. ; Ooi, Boon S. ; Hopkinson, Mark

  • Author_Institution
    Lehigh Univ., Bethlehem
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Using time-resolved pump-probe differential photoluminescence technique, exciton decay time was measured to significantly increase as temperature was increased in InAs quantum dots embedded in an InGaAs/GaAs quantum well.
  • Keywords
    III-V semiconductors; electron-hole recombination; excitons; gallium arsenide; indium compounds; optical pumping; photoluminescence; semiconductor quantum dots; semiconductor quantum wells; time resolved spectra; InAs; InGaAs-GaAs; exciton decay time; exciton recombination; quantum dots; quantum well; time-resolved pump-probe differential photoluminescence; Excitons; Gallium arsenide; Indium gallium arsenide; Photoluminescence; Quantum computing; Quantum dot lasers; Quantum dots; Radiative recombination; Temperature; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4453369
  • Filename
    4453369
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3019099