DocumentCode :
3019107
Title :
Revising the goals and means for the base-to-air cooling stage for semiconductor heat-removal-experiments and their results
Author :
Hu, Kai-Wei ; Rizzi, Maurizio ; Canino, M. ; Catton, I.
fYear :
2001
fDate :
2001
Firstpage :
85
Lastpage :
94
Abstract :
The development of simulation methods and data reduction for heat sink experiments are the purpose of this work. The study dealt with an experimental investigation of semiconductor heat sink performance characteristics. The heat sinks were constructed of aluminum and consisted of an array of staggered pin fins and longitudinal fins. The cooling fluid was air and the experiments were conducted with a porous medium Reynolds number ranging from 400 to 17000. A number of data reduction parameters and procedures were developed using a scaling heterogeneous formulation by volume averaging theory (VAT). We analysed the basic homogeneous heat transfer performance features and have shown the insolvency of using conventional Nusselt numbers, homogeneous heat transfer rate and effectiveness parameters. We introduced and analysed heterogeneous upper scale heat transfer characteristics, and provided comparisons with other studies
Keywords :
aluminium; circuit simulation; cooling; data reduction; flow simulation; heat sinks; integrated circuit modelling; integrated circuit packaging; thermal analysis; thermal management (packaging); Al; Al heat sinks; Nusselt numbers; air cooling fluid; base-to-air cooling stage; data reduction; data reduction parameters; data reduction procedures; effectiveness parameters; heterogeneous upper scale heat transfer characteristics; homogeneous heat transfer performance; homogeneous heat transfer rate; longitudinal fins; porous medium Reynolds number; scaling heterogeneous formulation; semiconductor heat sink performance characteristics; semiconductor heat-removal; simulation methods; staggered pin fins; volume averaging theory; Conductivity; Coolants; Cooling; Heat pumps; Heat sinks; Heat transfer; Resistance heating; Surface morphology; Surface resistance; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Thermal Measurement and Management, 2001. Seventeenth Annual IEEE Symposium
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-6649-2
Type :
conf
DOI :
10.1109/STHERM.2001.915152
Filename :
915152
Link To Document :
بازگشت