• DocumentCode
    3019117
  • Title

    Silicon angular resonance gyroscope by deep ICPRIE and XeF2 gas etching

  • Author

    Choi, Jae-joon ; Toda, Risaku ; Minami, Kazuyuki ; Esashi, Masayoshi

  • Author_Institution
    Fac. of Eng., Tohoku Univ., Sendai, Japan
  • fYear
    1998
  • fDate
    25-29 Jan 1998
  • Firstpage
    322
  • Lastpage
    327
  • Abstract
    An angular resonance silicon gyroscope was fabricated by deep RIE and XeF2 gas etching. Using these two etching methods, a sensor which has beams in the center of the thickness of its mass could be fabricated very precisely. The sensor has a glass-silicon-glass structure and its resonator is excited electrostatically and the vibration caused by the angular rate is measured capacitively. Sensor sensitivity obtained was 2.1 fF/(deg/sec)
  • Keywords
    elemental semiconductors; gyroscopes; microsensors; semiconductor technology; silicon; sputter etching; xenon compounds; Si angular resonance gyroscope; XeF2; XeF2 gas etching; angular rate; deep ICPRIE; deep RIE; glass-Si-glass structure; sensor sensitivity; vibration; Dry etching; Electrodes; Glass; Gyroscopes; Micromachining; Resonance; Silicon; Sputter etching; Vibration measurement; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 1998. MEMS 98. Proceedings., The Eleventh Annual International Workshop on
  • Conference_Location
    Heidelberg
  • ISSN
    1084-6999
  • Print_ISBN
    0-7803-4412-X
  • Type

    conf

  • DOI
    10.1109/MEMSYS.1998.659776
  • Filename
    659776
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3019117