DocumentCode :
3019121
Title :
K-band ladder filters employing air-gap type thin film bulk acoustic resonators
Author :
Yokoyama, Tsuyoshi ; Hara, Masaki ; Ueda, Makoto ; Satoh, Yoshio
Author_Institution :
FUJITSU Ltd., Akashi
fYear :
2008
fDate :
2-5 Nov. 2008
Firstpage :
598
Lastpage :
601
Abstract :
We describe the fabrication and characteristics of a filter with aluminum nitride thin film bulk acoustic resonators (FBAR) for the K-band. The FBAR has an air-gap beneath the resonator to acoustically isolate itself from the substrate, and is has an extremely thin film thickness to operate in the K-band. The FBAR has two structural features, a sacrificial layer to make the air-gap very thin in order to prevent the resonator from cracking on the edge of the air-gap and a resonator that is deformed into the shape of a dome by the film stresses to maintain the air-gap. The fabricated FBAR operated successfully at a keff 2 of 6.25%, a resonance Q of 189, and an anti-resonance Q of 171. The fabricated filter had a center frequency of 19.8 GHz, a minimum insertion loss of 4.1 dB and a fractional bandwidth of 2.0%.
Keywords :
III-V semiconductors; Q-factor; acoustic resonator filters; aluminium compounds; bulk acoustic wave devices; ladder filters; microwave filters; semiconductor thin films; thin film devices; wide band gap semiconductors; AlN; K-band ladder filters; air-gap type thin film FBAR fabrication; antiresonance Q; bulk acoustic resonators; film stresses; frequency 19.8 GHz; insertion loss; loss 4.1 dB; resonator cracking; Air gaps; Aluminum nitride; Fabrication; Film bulk acoustic resonators; K-band; Resonator filters; Shape; Stress; Substrates; Transistors; AlN; FBAR; K-band; air-gap; filter;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 2008. IUS 2008. IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2428-3
Electronic_ISBN :
978-1-4244-2480-1
Type :
conf
DOI :
10.1109/ULTSYM.2008.0143
Filename :
4803309
Link To Document :
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