Title :
SiGe BJTs for low-voltage power applications
Author :
Keefe, Matthew F O´ ; Henderson, Gregory N. ; Boles, Timothy E. ; Noonan, Paulette ; Sledziewski, John M. ; Brown, Brian
Author_Institution :
M/A-COM Inc., Lowell, MA, USA
Abstract :
This paper describes the development of silicon germanium (SiGe) based transistors for low-voltage handset applications in the 0.9-2.4 GHz frequency range. The SiGe BJTs developed for this effort consisted of two types; the first were small-signal devices, the second were power devices with a modified collector for increased breakdown voltage. Small-signal devices, at Vc=4.0 V, exhibited an fT=15 GHz and fMAX=14 GHz, with 15 dB MSG/MAG at 2 GHz. Load-pull results for these devices demonstrated a power gain Gp=16 dB, P1dB=18 dBm and PAE (P1 dB)=29% if tuned for power and Gp 13.8 dB, P1 dB=17 dBm and PAE(P1 dB)=41%, if tuned for efficiency. When driven into compression, the devices achieved >50% PAE at an output power of 20 dBm and a gain of 8 dB. Power devices at Vc=5.0 V showed Gp=16 dB, P1dB =25 dBm, PAE(P1 dB)=52%
Keywords :
Ge-Si alloys; UHF bipolar transistors; UHF power amplifiers; power bipolar transistors; semiconductor device reliability; semiconductor materials; 0.9 to 2.4 GHz; 13.8 dB; 15 GHz; 16 GHz; 16 dB; 29 percent; 4 V; 41 percent; 5 V; 52 percent; 8 dB; BJTs; PAE; SiGe; UHF power devices; breakdown voltage; handset applications; load-pull results; low-voltage power applications; output power; power gain; small-signal devices; Bipolar transistors; Doping; Frequency; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Photonic band gap; Power amplifiers; Silicon germanium; Telephone sets;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, 1996. EDMO
Conference_Location :
Leeds
Print_ISBN :
0-7803-3130-3
DOI :
10.1109/EDMO.1996.575792
