DocumentCode
3019206
Title
A novel VLSI layout fabric for deep sub-micron applications
Author
Khatri, Sunil P. ; Mehrotra, Amit ; Brayton, Robert K. ; Sangiovanni-Vincentelli, Alberto ; Otten, Ralph H J M
fYear
1999
fDate
1999
Firstpage
491
Lastpage
496
Abstract
Proposes a new VLSI layout methodology which addresses the main problems faced in deep sub-micron (DSM) integrated circuit design. Our layout “fabric” scheme eliminates the conventional notion of power and ground routing on the integrated circuit die. Instead, power and ground are essentially “pre-routed” all over the die. By a clever arrangement of power/ground and signal pins, we almost completely eliminate the capacitive effects between signal wires. Additionally. We get a power and ground distribution network with a very low resistance at any point on the die. Another advantage of our scheme is that the arrangement of conductors ensures that on-chip inductances are uniformly negligible. Finally, characterization of the circuit delays, capacitances and resistances becomes extremely simple in our scheme, and needs to be done only once for a design. We show how the uniform parasitics of our fabric give rise to a reliable and predictable design. We have implemented our scheme using public domain layout software. Preliminary results show that it holds much promise as the layout methodology of choice in DSM integrated circuit design
Keywords
VLSI; circuit layout CAD; delays; inductance; integrated circuit layout; network routing; VLSI layout fabric; capacitances; circuit delays; deep sub-micron applications; deep sub-micron integrated circuit design; ground routing; integrated circuit die; on-chip inductances; power/ground pins; public domain layout software; signal pins; uniform parasitics; Conductors; Delay; Fabrics; Integrated circuit layout; Integrated circuit synthesis; Parasitic capacitance; Pins; Routing; Very large scale integration; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Design Automation Conference, 1999. Proceedings. 36th
Conference_Location
New Orleans, LA
Print_ISBN
1-58113-092-9
Type
conf
DOI
10.1109/DAC.1999.781365
Filename
781365
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