Comparison between front- and back-gating of Silicon Nanoribbons in real-time sensing experiments

Author

Accastelli, E. ; Cappi, G. ; Buckley, Joseph ; Ernst, Thomas ; Guiducci, C.

Author_Institution

Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland

fYear

2013

fDate

5-8 Aug. 2013

Firstpage

517

Lastpage

520

Abstract

Field-effect transistors (FETs) with open gate structures such as Silicon Nanoribbons (SiNRs) are promising candidates to become general platforms for ultrasensitive, label-free and real-time detection of biochemical interactions on surface. This work proposes and demonstrates the viability of a solution for integrating Ag/AgCl reference electrodes with the microfluidics. A comparison between different polarization schemes is carried out with an analysis of the respective advantages and disadvantages.

Keywords

biosensors; electrochemical electrodes; elemental semiconductors; field effect transistors; microfluidics; nanoribbons; real-time systems; silicon; Ag-AgCl; Ag-AgCl reference electrodes; FET; Si; back-gating; biochemical interactions; field effect transistors; front-gating; label-free detection; microfluidics; open gate structures; real-time detection; real-time sensing; silicon nanoribbons; ultrasensitive detection; Interference; Logic gates; Microfluidics; Real-time systems; Sensors; Signal to noise ratio; Silicon; back-gating; front-gating; microfluidics; reference electrode; silicon nanoribbons;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology (IEEE-NANO), 2013 13th IEEE Conference on

Conference_Location

Beijing

ISSN

1944-9399

Print_ISBN

978-1-4799-0675-8

Type

conf

DOI

10.1109/NANO.2013.6721024

Filename

6721024