The realisation of GaInP/GaAs power HBTs

Author

Crouch, M.A. ; Hilton, K.P. ; Bourke, M.M. ; Hughes, B.T. ; Davis, R.G.

Author_Institution

Defence Res. Agency, Malvern, UK

fYear

1996

fDate

25-26 Nov 1996

Firstpage

33

Lastpage

36

Abstract

The GaAs based heterojunction bipolar transistor (HBT) continues to show improvements in power, efficiency and bandwidth making it very desirable for power amplifier applications. Among these are military phased array radar, secure communications, mobile phones, wireless networks and satellite communications. The foundation for the HBT is firmly rooted in its material base. The early candidate for HBT devices GaAlAs/GaAs has in many instances now been replaced by GaInP/GaAs due to its superior electrical and physical properties. While the inclusion of GaInP does offer numerous benefits for HBT devices it is comparatively immature and is not without its own difficulties. In this paper the technology and problems associated with the practical realisation of power HBT devices based on the material system GaInP/GaAs are discussed

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; military communication; mobile communication; phased array radar; power amplifiers; power bipolar transistors; satellite communication; GaInP-GaAs; III-V semiconductors; military phased array radar; mobile phones; power HBTs; power amplifier applications; satellite communications; secure communications; wireless networks; Bandwidth; Gallium arsenide; Heterojunction bipolar transistors; Military communication; Mobile communication; Mobile handsets; Phased arrays; Power amplifiers; Spaceborne radar; Wireless networks;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, 1996. EDMO

Conference_Location

Leeds

Print_ISBN

0-7803-3130-3

Type

conf

DOI

10.1109/EDMO.1996.575793

Filename

575793