• DocumentCode
    3019425
  • Title

    Designing memristors: Physics, materials science and engineering

  • Author

    Ribeiro, Gilberto Medeiros ; Yang, J. Joshua ; Nickel, Janice ; Torrezan, Antonio ; Strachan, John Paul ; Williams, R.Stanley

  • Author_Institution
    Nanoelectron. Res. group, Hewlett-Packard Labs., Palo Alto, CA, USA
  • fYear
    2012
  • fDate
    20-23 May 2012
  • Firstpage
    2513
  • Lastpage
    2516
  • Abstract
    Recently, memory and storage have taken a front seat in computer hardware as it experiences an explosive growth at a rate faster than Moore´s law for the past 10 years. With the upcoming challenges for further FLASH scaling into the next generations, emerging technologies have appeared portraying perspectives with the potential to shift computer architecture concepts. Here we present a brief overview and progress in our quest to create a device with competitive attributes, with the ultimate goal of achieving a universal, non-volatile data storage solution.
  • Keywords
    computer architecture; flash memories; memristors; random-access storage; FLASH scaling; Moore´s law; computer architecture; computer hardware; memristors; nonvolatile data storage solution; universal data storage solution; Materials; Memristors; Nanotechnology; Phase change random access memory; Resistance; Switches; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
  • Conference_Location
    Seoul
  • ISSN
    0271-4302
  • Print_ISBN
    978-1-4673-0218-0
  • Type

    conf

  • DOI
    10.1109/ISCAS.2012.6271813
  • Filename
    6271813