DocumentCode
3019425
Title
Designing memristors: Physics, materials science and engineering
Author
Ribeiro, Gilberto Medeiros ; Yang, J. Joshua ; Nickel, Janice ; Torrezan, Antonio ; Strachan, John Paul ; Williams, R.Stanley
Author_Institution
Nanoelectron. Res. group, Hewlett-Packard Labs., Palo Alto, CA, USA
fYear
2012
fDate
20-23 May 2012
Firstpage
2513
Lastpage
2516
Abstract
Recently, memory and storage have taken a front seat in computer hardware as it experiences an explosive growth at a rate faster than Moore´s law for the past 10 years. With the upcoming challenges for further FLASH scaling into the next generations, emerging technologies have appeared portraying perspectives with the potential to shift computer architecture concepts. Here we present a brief overview and progress in our quest to create a device with competitive attributes, with the ultimate goal of achieving a universal, non-volatile data storage solution.
Keywords
computer architecture; flash memories; memristors; random-access storage; FLASH scaling; Moore´s law; computer architecture; computer hardware; memristors; nonvolatile data storage solution; universal data storage solution; Materials; Memristors; Nanotechnology; Phase change random access memory; Resistance; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location
Seoul
ISSN
0271-4302
Print_ISBN
978-1-4673-0218-0
Type
conf
DOI
10.1109/ISCAS.2012.6271813
Filename
6271813
Link To Document