A pulse-shaped power amplifier with dynamic bias switching for IR-UWB transmitters

Author

Geng, Shuli ; Rhee, Woogeun ; Wang, Zhihua

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2012

fDate

20-23 May 2012

Firstpage

2529

Lastpage

2532

Abstract

This paper presents a pulse-shaped power amplifier (PSPA) design for delay line based IR-UWB transmitters. By utilizing an array of CMOS transmission gates as a dynamic bias scheme, the switched PA generates desired output pulse with negligible static current. The PSPA designed in 65nm CMOS generates UWB pulses with a -10dB bandwidth of 2.7GHz and a center frequency of 5GHz and achieves reconfigurable pulse shaping with high power efficiency. Simulation results show that the energy consumption of the PA is 3pJ/pulse with a typical current efficiency of 90% at a data rate of 200Mbps.

Keywords

CMOS analogue integrated circuits; MMIC power amplifiers; radio transmitters; ultra wideband communication; CMOS transmission gate; IR-UWB transmitters; bandwidth 2.7 GHz; bit rate 200 Mbit/s; dynamic bias switching; efficiency 90 percent; frequency 5 GHz; impulse radio ultra wideband technique; pulse shaped power amplifier; size 65 nm; switched power amplifier; Bandwidth; CMOS integrated circuits; Logic gates; Pulse shaping methods; Radio transmitters; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2012 IEEE International Symposium on

Conference_Location

Seoul

ISSN

0271-4302

Print_ISBN

978-1-4673-0218-0

Type

conf

DOI

10.1109/ISCAS.2012.6271817

Filename

6271817