DocumentCode
3019594
Title
Influence of symmetry on the conductance of a graphene double dot
Author
Marconcini, Paolo
Author_Institution
Dipt. di Ing. dell´Inf., Univ. di Pisa, Pisa, Italy
fYear
2013
fDate
5-8 Aug. 2013
Firstpage
989
Lastpage
992
Abstract
We numerically study the transport behavior of a graphene cavity delimited by two constrictions and divided into two dots by the tunnel barrier induced by the electrostatic action of a negatively biased gate. Performing an analysis, based on an envelope function approach, of the dependence of the conductance on the position of the tunnel barrier, we observe a maximum when the barrier is at the middle of the cavity, an effect similar, even though less pronounced, to that recently studied in devices based on semiconductor heterostructures.
Keywords
electric admittance; graphene; numerical analysis; quantum dots; tunnelling; C; conductance symmetry; electrostatic action; envelope function approach; graphene cavity; graphene double dot; negatively biased gate; numerical analysis; semiconductor heterostructures; transport behavior; tunnel barrier; Cavity resonators; Equations; Graphene; Logic gates; Mathematical model; Noise; Quantum dots;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2013 13th IEEE Conference on
Conference_Location
Beijing
ISSN
1944-9399
Print_ISBN
978-1-4799-0675-8
Type
conf
DOI
10.1109/NANO.2013.6721038
Filename
6721038
Link To Document