DocumentCode :
3019594
Title :
Influence of symmetry on the conductance of a graphene double dot
Author :
Marconcini, Paolo
Author_Institution :
Dipt. di Ing. dell´Inf., Univ. di Pisa, Pisa, Italy
fYear :
2013
fDate :
5-8 Aug. 2013
Firstpage :
989
Lastpage :
992
Abstract :
We numerically study the transport behavior of a graphene cavity delimited by two constrictions and divided into two dots by the tunnel barrier induced by the electrostatic action of a negatively biased gate. Performing an analysis, based on an envelope function approach, of the dependence of the conductance on the position of the tunnel barrier, we observe a maximum when the barrier is at the middle of the cavity, an effect similar, even though less pronounced, to that recently studied in devices based on semiconductor heterostructures.
Keywords :
electric admittance; graphene; numerical analysis; quantum dots; tunnelling; C; conductance symmetry; electrostatic action; envelope function approach; graphene cavity; graphene double dot; negatively biased gate; numerical analysis; semiconductor heterostructures; transport behavior; tunnel barrier; Cavity resonators; Equations; Graphene; Logic gates; Mathematical model; Noise; Quantum dots;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO), 2013 13th IEEE Conference on
Conference_Location :
Beijing
ISSN :
1944-9399
Print_ISBN :
978-1-4799-0675-8
Type :
conf
DOI :
10.1109/NANO.2013.6721038
Filename :
6721038
Link To Document :
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