On the stability of the DC and RF gain of GaInP/GaAs HBTs

Author

Borgarino, M. ; Plana, R. ; Tartarin, J.G. ; Delage, S. ; Blanck, H. ; Fantini, F. ; Graffeuil, J.

Author_Institution

Dipt. di Ingegneria dell´´Inf., Parma Univ., Italy

fYear

1996

fDate

25-26 Nov 1996

Firstpage

37

Lastpage

42

Abstract

In the present work the reliability of Carbon-doped GaInP/GaAs HBTs is evaluated by means of a current stress performed at room temperature. The impact of the stress on DC and RF characteristics and low frequency noise is reported, and a correlation between DC, RF, and noise variations is demonstrated. The effects observed are explained in terms of Carbon passivation by Hydrogen atoms released from passivation/semiconductor interface during the stress

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; passivation; semiconductor device noise; semiconductor device reliability; DC gain; GaInP:C,H-GaAs; RF gain; carbon-doped GaInP/GaAs HBT; current stress; hydrogen passivation; low frequency noise; reliability; semiconductor interface; stability; Gallium arsenide; Hydrogen; Low-frequency noise; Passivation; Performance evaluation; Radio frequency; Semiconductor device noise; Stability; Stress; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, 1996. EDMO

Conference_Location

Leeds

Print_ISBN

0-7803-3130-3

Type

conf

DOI

10.1109/EDMO.1996.575794

Filename

575794