• DocumentCode
    3019649
  • Title

    BAW resonators based on AlN with Ir electrodes for digital wireless transmissions

  • Author

    Iborra, E. ; Clement, M. ; Olivares, J. ; González-Castilla, S. ; Sangrador, J. ; Rimmer, N. ; Rastogi, A. ; Ivira, B. ; Reinhardt, A.

  • Author_Institution
    Grupo de Microsistemas y Mater. Electronicos, Univ. Politec. de Madrid, Madrid
  • fYear
    2008
  • fDate
    2-5 Nov. 2008
  • Firstpage
    2189
  • Lastpage
    2192
  • Abstract
    We investigate the performance of aluminum nitride (AlN)-based solidly mounted resonators (SMR) made with iridium (Ir) electrodes for applications in WCDMA filters. Ir/AlN/Ir stacks are grown on top of insulating Bragg mirrors composed of alternate lambda/4 layers of silicon oxycarbide (SiOC) and silicon nitride (Si3N4). We have developed the technological processes for the fabrication of filters including the trimming of the Ir top electrode for the tuning of the bandwidth. The influence of the thickness of the top electrode after the tuning process in the performance of the SMRs and filters is analyzed. The performance of the devices is compared with that of SMRs and filters of identical design made with Mo electrodes.
  • Keywords
    III-V semiconductors; acoustic resonator filters; aluminium compounds; bulk acoustic wave devices; code division multiple access; iridium; radiofrequency filters; silicon compounds; wide band gap semiconductors; BAW resonators; Ir-AlN-Ir; SiOC-Si3N4; aluminum nitride; digital wireless transmissions; filter fabrication; insulating Bragg mirrors; iridium electrodes; silicon nitride; silicon oxycarbide; solidly mounted resonators; tuning process; Aluminum nitride; Bandwidth; Electrodes; Fabrication; Insulation; Mirrors; Multiaccess communication; Performance analysis; Resonator filters; Silicon on insulator technology; AlN; BAW filter; BAW resonator; Iridium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium, 2008. IUS 2008. IEEE
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2428-3
  • Electronic_ISBN
    978-1-4244-2480-1
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2008.0542
  • Filename
    4803331