Title :
BAW resonators based on AlN with Ir electrodes for digital wireless transmissions
Author :
Iborra, E. ; Clement, M. ; Olivares, J. ; González-Castilla, S. ; Sangrador, J. ; Rimmer, N. ; Rastogi, A. ; Ivira, B. ; Reinhardt, A.
Author_Institution :
Grupo de Microsistemas y Mater. Electronicos, Univ. Politec. de Madrid, Madrid
Abstract :
We investigate the performance of aluminum nitride (AlN)-based solidly mounted resonators (SMR) made with iridium (Ir) electrodes for applications in WCDMA filters. Ir/AlN/Ir stacks are grown on top of insulating Bragg mirrors composed of alternate lambda/4 layers of silicon oxycarbide (SiOC) and silicon nitride (Si3N4). We have developed the technological processes for the fabrication of filters including the trimming of the Ir top electrode for the tuning of the bandwidth. The influence of the thickness of the top electrode after the tuning process in the performance of the SMRs and filters is analyzed. The performance of the devices is compared with that of SMRs and filters of identical design made with Mo electrodes.
Keywords :
III-V semiconductors; acoustic resonator filters; aluminium compounds; bulk acoustic wave devices; code division multiple access; iridium; radiofrequency filters; silicon compounds; wide band gap semiconductors; BAW resonators; Ir-AlN-Ir; SiOC-Si3N4; aluminum nitride; digital wireless transmissions; filter fabrication; insulating Bragg mirrors; iridium electrodes; silicon nitride; silicon oxycarbide; solidly mounted resonators; tuning process; Aluminum nitride; Bandwidth; Electrodes; Fabrication; Insulation; Mirrors; Multiaccess communication; Performance analysis; Resonator filters; Silicon on insulator technology; AlN; BAW filter; BAW resonator; Iridium;
Conference_Titel :
Ultrasonics Symposium, 2008. IUS 2008. IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2428-3
Electronic_ISBN :
978-1-4244-2480-1
DOI :
10.1109/ULTSYM.2008.0542
