DocumentCode :
3019655
Title :
Temperature Dependence of Ultrafast Laser Ablation Efficiency of Crystalline Silicon
Author :
Yahng, J.S. ; Jeoung, S.C.
Author_Institution :
Korea Res. Inst. of Stand. & Sci., Daejeon
fYear :
2007
fDate :
6-11 May 2007
Firstpage :
1
Lastpage :
2
Abstract :
Ultrafast laser ablation of crystalline silicon was investigated as a function of temperature. The ablation efficiency is slightly enhanced with an apparent decrease in ablation threshold and surface roughness at a high substrate temperature.
Keywords :
elemental semiconductors; high-speed optical techniques; laser ablation; silicon; surface roughness; Si; crystalline silicon; substrate temperature; surface roughness; ultrafast laser ablation efficiency; Crystallization; Laser ablation; Optical surface waves; Pulsed laser deposition; Rough surfaces; Silicon; Surface emitting lasers; Surface morphology; Temperature dependence; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
Type :
conf
DOI :
10.1109/CLEO.2007.4453395
Filename :
4453395
Link To Document :
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