Influence of annealing temperature on the performance of graphene / SiC transistors with high-k / metal gate

Author

Clavel, M. ; Poiroux, T. ; Mouis, M. ; Becerra, L. ; Thomassin, J.L. ; Zenasni, A. ; Lapertot, G. ; Rouchon, D. ; Lafond, D. ; Faynot, O.

Author_Institution

CEA, MINATEC, Grenoble, France

fYear

2011

fDate

14-16 March 2011

Firstpage

1

Lastpage

4

Abstract

In this study, we investigate the impact of thermal annealing on the electrical characteristics of epitaxial graphene field effect transistors. Top gated devices were fabricated from graphene obtained on silicon carbide (SiC) substrate. Thanks to an annealing at 300°C, the performance of the devices was enhanced by a factor of 90. The maximal transconductance reached really high values such as 5900μS/μm at V_D=3V, corresponding to a carrier mobility of 2230 cm²/V.s.

Keywords

carrier mobility; graphene; high-k dielectric thin films; organic field effect transistors; rapid thermal annealing; silicon compounds; wide band gap semiconductors; C; SiC; annealing temperature; carrier mobility; electrical characteristics; epitaxial graphene field effect transistors; graphene/SiC transistors; high-k/metal gate; maximal transconductance; silicon carbide substrate; temperature 300 degC; thermal annealing; voltage 3 V; Annealing; Current measurement; Epitaxial growth; Logic gates; Performance evaluation; Silicon carbide; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on

Conference_Location

Cork

Print_ISBN

978-1-4577-0090-3

Electronic_ISBN

978-1-4577-0089-7

Type

conf

DOI

10.1109/ULIS.2011.5757955

Filename

5757955