Title :
The impact of junction angle on tunnel FETs
Author :
Kao, Frank K H ; Verhulst, Anne S. ; Vandenberghe, William G. ; Groeseneken, Guido ; Meyer, Kristin De
Author_Institution :
Imec, Leuven, Belgium
Abstract :
We derive an analytical model based on circular tunnel paths along the electric field to describe the behavior of a tunnel FET with a junction angle at the source. The model is compared with simulation results and qualitative agreement is observed. We further demonstrate that a small junction angle prevents TFET performance degradation resulting from a high-k spacer. Finally we optimize the junction angle with an encroaching source structure, studying the dependence on oxide thickness and semiconductor material.
Keywords :
high-k dielectric thin films; junction gate field effect transistors; semiconductor materials; circular tunnel paths; electric field; high-k spacer; junction angle impact; oxide thickness; semiconductor material; tunnel FET; Analytical models; Degradation; Junctions; Logic gates; Semiconductor process modeling; Silicon; Tunneling;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on
Conference_Location :
Cork
Print_ISBN :
978-1-4577-0090-3
Electronic_ISBN :
978-1-4577-0089-7
DOI :
10.1109/ULIS.2011.5757957
