Title :
Atomic scale simulation of a junctionless silicon nanowire transistor
Author :
Ansari, Lida ; Feldman, Baruch ; Fagas, Giorgos ; Colinge, Jean-Pierre ; Greer, James C.
Author_Institution :
Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland
Abstract :
We have simulated silicon nanowire junctionless transistors with a 3 nm gate length within a Density Functional Theory (DFT) framework. We explored the response of transistors to source-drain bias, VDS, and gate voltage, Vg. Also, the effect of bulk and surface adatom in the wire cross section was evaluated.
Keywords :
MOSFET; density functional theory; elemental semiconductors; nanowires; semiconductor quantum wires; silicon; Si; atomic scale simulation; bulk adatom; density functional theory; gate voltage; junctionless silicon nanowire transistor; size 3 nm; source-drain bias; surface adatom; Doping; Electrostatics; Logic gates; Photonic band gap; Silicon; Transistors; Wire;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on
Conference_Location :
Cork
Print_ISBN :
978-1-4577-0090-3
Electronic_ISBN :
978-1-4577-0089-7
DOI :
10.1109/ULIS.2011.5757980
