Title :
Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors
Author :
Schmidt, M. ; Minamisawa, R.A. ; Richter, S. ; Hartmann, J.-M. ; Luptak, R. ; Tiedemann, A. ; Buca, D. ; Zhao, Q.T. ; Mantl, S.
Author_Institution :
Peter-Grunberg-Inst. (PGI 9-IT), JARA-FIT Forschungszentrum, Julich, Germany
Abstract :
Compressively strained Si1-xGex band-to-band tunneling field effect transistors with planar structure and HfO2/TiN gate stack have been produced and analyzed, with different Germanium concentrations of x = 0.35, 0.50 and 0.65. Simulations using a nonlocal band-to-band-tunneling model have been carried out to understand the switching behavior and its dependence on the material parameters. One would expect an increase of the tunneling currents for the increase of x. However, the Si0.5Ge0.5 devices show the highest Ion and smallest S, whereas Si0.35Ge0.65 devices exhibit decreased currents due to partial strain relaxation.
Keywords :
Ge-Si alloys; field effect transistors; hafnium compounds; high-k dielectric thin films; semiconductor materials; titanium compounds; HfO2-TiN; Si1-xGex; compressively strained band-to-band tunneling field effect transistors; high-κ gate dielectric; nonlocal band-to-band-tunneling model; partial strain relaxation; switching behavior; Logic gates; Performance evaluation; Photonic band gap; Silicon; Silicon germanium; Strain; Tunneling;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on
Conference_Location :
Cork
Print_ISBN :
978-1-4577-0090-3
Electronic_ISBN :
978-1-4577-0089-7
DOI :
10.1109/ULIS.2011.5757982
