Monte Carlo simulation of a 20 nm gate length implant free quantum well Ge pMOSFET with different lateral spacer width

Author

Chan, KahHou ; Benbakhti, Brahim ; Riddet, Craig ; Watling, Jeremy ; Asenov, Asen

Author_Institution

Device Modelling Group, Univ. of Glasgow, Glasgow, UK

fYear

2011

fDate

14-16 March 2011

Firstpage

1

Lastpage

4

Abstract

The use of high mobility channel materials such as Germanium can increase the pMOSFET drive current, thus improving the switching speed of CMOS. In this study the impact of the lateral spacer thickness on the performance of a 20 nm gate-length implant-free quantum well (IFQW) Ge pMOSFET is investigated using comprehensive full-band Monte Carlo simulations. The results of these simulations show that the narrowing of the spacer from 5 nm down to 1 nm leads to a possible ~2.5× increase in drive current.

Keywords

CMOS integrated circuits; MOSFET; Monte Carlo methods; elemental semiconductors; germanium; quantum well devices; CMOS integrated circuit; Ge; Ge pMOSFET; Monte Carlo simulation; implant-free quantum well; lateral spacer width; mobility channel materials; pMOSFET drive current; Backscatter; Logic gates; MOSFET circuits; Monte Carlo methods; Performance evaluation; Resistance; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on

Conference_Location

Cork

Print_ISBN

978-1-4577-0090-3

Electronic_ISBN

978-1-4577-0089-7

Type

conf

DOI

10.1109/ULIS.2011.5757985

Filename

5757985