Title :
Monte Carlo simulation of a 20 nm gate length implant free quantum well Ge pMOSFET with different lateral spacer width
Author :
Chan, KahHou ; Benbakhti, Brahim ; Riddet, Craig ; Watling, Jeremy ; Asenov, Asen
Author_Institution :
Device Modelling Group, Univ. of Glasgow, Glasgow, UK
Abstract :
The use of high mobility channel materials such as Germanium can increase the pMOSFET drive current, thus improving the switching speed of CMOS. In this study the impact of the lateral spacer thickness on the performance of a 20 nm gate-length implant-free quantum well (IFQW) Ge pMOSFET is investigated using comprehensive full-band Monte Carlo simulations. The results of these simulations show that the narrowing of the spacer from 5 nm down to 1 nm leads to a possible ~2.5× increase in drive current.
Keywords :
CMOS integrated circuits; MOSFET; Monte Carlo methods; elemental semiconductors; germanium; quantum well devices; CMOS integrated circuit; Ge; Ge pMOSFET; Monte Carlo simulation; implant-free quantum well; lateral spacer width; mobility channel materials; pMOSFET drive current; Backscatter; Logic gates; MOSFET circuits; Monte Carlo methods; Performance evaluation; Resistance; Silicon;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on
Conference_Location :
Cork
Print_ISBN :
978-1-4577-0090-3
Electronic_ISBN :
978-1-4577-0089-7
DOI :
10.1109/ULIS.2011.5757985
