DocumentCode
3020351
Title
Impact of on-chip inductance when transitioning from Al to Cu based technology
Author
Chen, Tom
Author_Institution
Syst. VLSI Technol. Organ., Hewlett-Packard Co., Fort Collins, CO, USA
fYear
2001
fDate
2001
Firstpage
173
Lastpage
178
Abstract
How does on-chip inductance impact timing closure when transitioning from Al to Cu based technology? This paper presents some experimental results based on a Al-based 0.18 μm CMOS process and a Cu-based 0.13 μm CMOS process. The results show that the impact of on-chip inductance is slightly more on the Cu-based 0.13 μm process than on the Al-based 0.18 μm process. Furthermore, the results demonstrate that on-chip inductance plays an insignificant role if we assume a perfect power supply network around the interconnect routes
Keywords
CMOS integrated circuits; aluminium; copper; inductance; integrated circuit interconnections; timing; 0.13 micron; 0.18 micron; Al; CMOS process; Cu; interconnect technology; on-chip inductance; timing closure; ultra-deep-submicron design; CMOS process; CMOS technology; Clocks; Inductance; Power supplies; Power transmission lines; Repeaters; System-on-a-chip; Timing; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality Electronic Design, 2001 International Symposium on
Conference_Location
San Jose, CA
Print_ISBN
0-7695-1025-6
Type
conf
DOI
10.1109/ISQED.2001.915223
Filename
915223
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