Title :
Impact of on-chip inductance when transitioning from Al to Cu based technology
Author_Institution :
Syst. VLSI Technol. Organ., Hewlett-Packard Co., Fort Collins, CO, USA
Abstract :
How does on-chip inductance impact timing closure when transitioning from Al to Cu based technology? This paper presents some experimental results based on a Al-based 0.18 μm CMOS process and a Cu-based 0.13 μm CMOS process. The results show that the impact of on-chip inductance is slightly more on the Cu-based 0.13 μm process than on the Al-based 0.18 μm process. Furthermore, the results demonstrate that on-chip inductance plays an insignificant role if we assume a perfect power supply network around the interconnect routes
Keywords :
CMOS integrated circuits; aluminium; copper; inductance; integrated circuit interconnections; timing; 0.13 micron; 0.18 micron; Al; CMOS process; Cu; interconnect technology; on-chip inductance; timing closure; ultra-deep-submicron design; CMOS process; CMOS technology; Clocks; Inductance; Power supplies; Power transmission lines; Repeaters; System-on-a-chip; Timing; Very large scale integration;
Conference_Titel :
Quality Electronic Design, 2001 International Symposium on
Conference_Location :
San Jose, CA
Print_ISBN :
0-7695-1025-6
DOI :
10.1109/ISQED.2001.915223
